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2 edition of preparation and thermoelectric properties of the Mg[inferior]2X (X=Si, Ge, Sn) alloys found in the catalog.

preparation and thermoelectric properties of the Mg[inferior]2X (X=Si, Ge, Sn) alloys

William J. Smith

preparation and thermoelectric properties of the Mg[inferior]2X (X=Si, Ge, Sn) alloys

by William J. Smith

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  • 31 Currently reading

Published by University of Birmingham in Birmingham .
Written in English


Edition Notes

Thesis (M.Sc.) - University of Birmingham, Dept of Metallurgy and Materials, 1985.

Statementby William J. Smith.
ID Numbers
Open LibraryOL14833132M

Fig. 2(a)–(e) shows the temperature dependent thermoelectric properties of Y doped Mg 2-x Y x Sn Ge The electrical resistivity of all the Y doped samples showed a decrease with increasing temperature. At the same doping amount of x = 3%, the room temperature electrical resistivity of the Y doped sample (∼ μΩ m) is 24 times higher than that of the Bi doped sample (∼5 μΩ m).Cited by: 9. Thermoelectric cooling mechanisms, thermomagnetic effects and thermionic emission including the fundamentals of the implementation of these basic mechanisms comprise the book’s subject. Therefore the book can serve as a reference to experimentalists ." (Vladimir Sládek, Zentralblatt MATH, Vol. , )Cited by:

The errors in the measurement of electrical properties were evaluated to be within 5%. 2 Results and Discussion Fig.1 shows the XRD patterns of the hot-pressed Mg 2 Si x Sn (GaSb) x Sb samples (x=, , , ) as well as the Mg 2 Si Sn matrix [11].Author: Du Zhengliang, Cui Jiaolin, Zhu Tiejun, Zhao Xinbing. The thermoelectric properties of alkali-ion-doped compounds Cu3Sb1−xMxSe4 (M = Na and K) prepared by mechanical alloying and spark plasma sintering compaction, are investigated systematically.

  Superior thermoelectric properties are exhibited in p-type Mg 2 X compounds originating from large density of states effective mass due to the large valley degeneracy of valence bands. Also like SiGe alloys, Mg 2 X compounds have cubic structure as is shown in figure 16 (a) and thus have good electronic by: 2. Influence of the grain sizes on thermoelectric parameters of pressurized solid solutions of the composition Mg 2 Si Sn was studied. The Seebeck coefficient, electric conductivity, thermal conductivity, and Hall coefficient were determined. Decreasing the grain size to the nanoscale was found to decrease the mobility at low temperatures and resulted in a peculiar temperature dependence Cited by: 1.


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Preparation and thermoelectric properties of the Mg[inferior]2X (X=Si, Ge, Sn) alloys by William J. Smith Download PDF EPUB FB2

Mg 2 Si 1−x Sn x (x =, and ) thermoelectric materials have been prepared by vacuum melting and melting/hot-pressing methods. The phase structures and electrical transport properties were measured. The relationships between electronic structures and electronic properties are by: Mg2Si1−xSnx (x =, and ) thermoelectric materials have been prepared by vacuum melting and melting/hot-pressing methods.

The phase structures and electrical transport properties. performance of Mg 2X solid solution system. For instance, Liu et al.[13] studied the n-type Mg 2Si 1 xSn x solid solutions and found a zT value of at K; Liu et al.[22] studied the TE properties of n-type Mg 2Ge Snwhere the zT value reached at K; Jiang et al.[23] have successfully synthe-sized a p-type Mg Ge Sn.

Mg 2 Si 1−x Ge x Solid Solution Semiconductors were prepared in the composition range ≤x≤ At a composition preparation and thermoelectric properties of the Mg[inferior]2X book, effects of impurities were investigated for dopants of Sb and r concentrations were controlled up to ×10 26 electrons/m 3 and ×10 25 holes/m 3 by doping Sb and Ag, respectively.

The thermal conductivity κ was measured at by: Abstract: Hot-press sintered thermoelectric elements of intermetallic compounds: Mg/sub 3/Bi/sub 2/ and Mg/sub 3/Sb/sub 2/ were examined for the feasibility as medium temperature range thermoelectric elements, which belong to the family of zinc blend crystal structure.

The experiments were carried out varying the sintering temperature in order. Mg 3 Sb 2 shows poor comprehensive thermoelectric properties mainly because its conductivity is very poor, despite it has very low thermal conductivity.

Excess Mg combined with small amount of Te doping can control carrier type and carrier concentration. The semiconductor and metallic transport mechanism coordinate to control the electrical transport characteristics and improve the Cited by: 5.

The thermoelectric properties of BTA-HPHT and BTA-SPS pellets were measured at temperatures ranging from to K. As shown in Fig. 6 a and b, the overall transport properties of the two pellets suggest that the tendencies of S versus temperature were opposite to those of σ, owing to the changes of their carrier by:   For thermoelectric generators, the individual thermoelectric elements are subjected to significant stresses under in-service conditions, due to thermal cycles, transients, and gradients, as well as thermal expansion mismatch and externally applied mechanical stresses.

Most thermoelectric materials are brittle, possessing a low fracture toughness that is typically no more than MPa m1/2 Cited by: Upon increasing doping concentration, the carrier concentration increases with decreasing Hall mobility except for the 3% Ga doping that shows saturated characteristics.

The temperature dependent thermoelectric properties of Mg 2-x Li x Sn GeMg 2-x Na x Sn Geand Mg 2 Sn x Ga x Ge are shown in Fig. 2, Fig. 3 Cited by: 2 The thermoelectric figure of merit Coefficient of performance of thermoelectric heat pumps and refrigerators The dimensionless figure of merit, ZT The efficiency of thermoelectric generators Multi-stage arrangements References 3 Measuring the thermoelectric properties.

Mg 3 Sb 2 was first recognized as a potential thermoelectric material by Bredt and Kendall, but this work was hampered by difficulties with sample preparation.

As a follow up, Verbrugge and Zytveld showed that Mg–Sb alloys were found to be similar to Pb–Te alloys with the advantages of a smaller mass density and a lower vapor pressure [7].Cited by: On the other hand, the thermoelectric performance of p-type Mg 3 Sb 2 is found to be limited (ZT thermoelectric properties of Mg 3 Sb 2 by using band structure and transport by: 1.

Mg 2 X IV (X IV = Si, Ge, Sn) compounds are semiconductors and their solid solutions are believed to be promising mid-temperature thermoelectric materials.

By contrast, Mg 2 Pb is a metal and few studies have been conducted to investigate the thermoelectric properties of Mg 2 Si–Mg 2 Pb solid solutions.

Here, we present a theoretical study exploring whether Mg 2 Pb–Mg 2 Si solid solutions. Mg2Si compounds are promising eco-friendly thermoelectric materials because both constituent elements of Mg and Si have no toxicity and exist richly in earth crust.

We have a plan to use the compounds in the applications that convert waste heat in the temperature range ( K) into electric power. However, the thermoelectric performance of the compounds has not yet reached to Cited by: 3.

First published on 9th May Mg 2 X IV (X IV = Si, Ge, Sn) compounds are semiconductors and their solid solutions are believed to be promising mid-temperature thermoelectric materials. By contrast, Mg 2 Pb is a metal and few studies have been conducted to investigate the thermoelectric properties of Mg 2 Si–Mg 2 Pb solid solutions.

Here, we present a theoretical study exploring whether Cited by: 1. First-principles study of thermoelectric properties of Mg2Si–Mg2Pb semiconductor materials† Tao Fan, *ab Congwei Xie,ac Shiyao Wang,a Artem R. Oganov*acd and Laifei Chengb Mg 2X IV (XIV ¼ Si, Ge, Sn) compounds are semiconductors and their solid solutions are believed to be promising mid-temperature thermoelectric materials.

By contrast, Mg 2Pb is a metal and few studies haveCited by: 1. The thermoelectric properties of Sb-doped Mg2Si (Mg2Si:Sb=1:x(≦x≦)) fabricated by spark plasma sintering have been characterized by Hall effect measurements at K and by.

The Mg{sub 3-x}ZnSb structure is different from the other substituted structures of MgSb, such as (Ca, Sr, Ba) MgSb or Mg{sub }Sm{sub }Sb, in a way that in Mg{sub 3-x}ZnSb the Mg atoms on. William J. Smith has written: 'The preparation and thermoelectric properties of the Mg[inferior]2X (X=Si, Ge, Sn) alloys' 'Mound-builders' -- subject(s): Antiquities, Mound-builders, Mounds Asked.

Enhancing thermoelectric properties of a p-type Mg3Sb2- based Zintl phase compound by Pb substitution in the anionic framework† A. Bhardwaj and D. Misra* Mg 3Sb 2-based Zintl compounds have recently attracted attention as a potential candidate for thermoelectric applications due to their low thermal conductivity and promising thermoelectric.

Mg 2 Si 1–x Sn x compounds are low-cost and environmentally friendly thermoelectric materials expected to be applied as power generators in the intermediate temperature range.

Optimization of the thermoelectric properties of Mg 2 Si 1–x Sn x compounds can be accomplished by the precise control and adjustment of the Mg content.

A series of Mg 2(1+z) Si –y Sn Sb y (0 ≤ y ≤ Cited by:   Figure 6 compares the thermoelectric properties of Bi- and Sb-doped Mg 2 Ge samples in this study with the previously reported Sb-doped Mg 2 Ge synthesized by a melting technique Cited by: discuss the thermodynamics of the thermoelectric devices, and derive a characteristic parameter called “figure of merit”.

Inwe will elaborate on the microscopic picture of thermoelectric materials. Then we will review conventional thermoelectric materials inand thermoelectric File Size: KB.